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Produkt information

Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 218 W
Maximum Drain-Source Voltage |Vds|: 40 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 220 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 156 nC
Rise Time (tr): 19 nS
Drain-Source Capacitance (Cd): 1463 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0032 Ohm

Produktkod: WSKUBL2I56

Skick: Ny


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